SD56120M
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General features
■ Exce...
SD56120M
RF POWER
Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability ■ Common source configuration Push-pull
■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■ Internal input matching
Description
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
M252 Epoxy sealed
Pin connection
12
3 54
1. Drain 2. Drain 3. Source
4. Gate 5. Gate
Order codes
Part number SD56120M
Package M252
Branding SD56120M
July 2006
Rev 10
1/14
www.st.com
14
Contents
Contents
SD56120M
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . ....