BUK7225-55A

BUK7225-55A TrenchMOS™ standard level FET Rev. 01 — 17 April 2001 M3D300 Product specification 1. Description www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK7225-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) drain (d) MBB076 g s 2 1 Top view 3 MBK091 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BUK7225-55A TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon www.DataSheet4U.com Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 25 50 Typ − − − − Max 55 43 94 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source v...