Document
BUK7214-75B
TrenchMOS™ standard level FET
M3D300
Rev. 01 — 26 January 2004
Product data
1. Product profile
1.1 Description
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N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 185 °C rated s Q101 compliant s Standard level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 133 mJ s ID ≤ 70 A s RDSon = 12.6 mΩ (typ) s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline
[1]
Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
d
mb
g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Philips Semiconductors
BUK7214-75B
TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7214-75B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). Version SOT428 Type number
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4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 70 A; VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min −55 −55 Max 75 75 ±20 70 50 283 167 +185 +185 70 283 133 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 12231
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 26 January 2004
2 of 12
Philips Semiconductors
BUK7214-75B
TrenchMOS™ standard level FET
120 Pder (%) 80
03no96
75 ID (A) 50
03nl22
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40 25
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
VGS ≥ 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 Limit RDSon = VDS / ID
03nl20
ID (A)
102
tp = 10 µ s
100 µ s
DC 10
1 ms
10 ms 100 ms
1 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source v.