STU4530NLS

S T U/D4530NLS S amHop Microelectronics C orp. Dec 28 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com F E AT UR E S ( mW) ID 53A R DS (ON) 8 T yp S uper high dense cell design for low R DS (ON ). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D 35V 10 D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ T C =25 C S ymbol Vspike (c) V DS V GS ID IDM IS PD T J , T S TG Limit 40 35 20 53 100 20 50 -55 to 175 Unit V V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D4530NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 28V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 35 1 V uA 100 nA 1 1.7 8 10 53 26 1620 280 155 0.3 20 22 55 17 33.5 16 3.7 7.5 3 10 12 V m...