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STD45NF03L

STMicroelectronics

N-CHANNEL POWER MOSFET

® STD45NF03L N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD45NF03L s s V DSS 3...


STMicroelectronics

STD45NF03L

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® STD45NF03L N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD45NF03L s s V DSS 30 V R DS(o n) < 0.013 Ω ID 45 A www.DataSheet4U.com s TYPICAL RDS(on) = 0.011 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM ( ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 45 31.5 180 55 0.37 200 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 22.5A , VDD = 20V Unit V V V A A A W W /o C mJ o o C C () Pulse width limited by safe operating area September 1999 1/6 STD45NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resist...




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