STD4N20

N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE STD4N20 www.DataSheet4U.com s TYPICAL s s s STD4N20 VDSS 200 V RDS(on) < 1.5 Ω ID 4A RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL 3 1 DPAK TO-252 IPAK TO-251 2 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 4 2.5 16 40 0.32 5 –65 to 150 150 (1)ISD ≤4A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area February 2001 1/9 STD4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resi...