N-CHANNEL MOSFET
N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET
TYPE STD4NB40
www.DataSheet4U.com s TYPICAL
s s s s
STD4NB40 ST...
Description
N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET
TYPE STD4NB40
www.DataSheet4U.com s TYPICAL
s s s s
STD4NB40 STD4NB40-1
VDSS 400 V
RDS(on) < 1.8 Ω
ID 4A
RDS(on) = 1.47 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
3 1
DPAK TO-252 IPAK TO-251
1
3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ± 30 4 2.52 16 60 0.47 4 –65 to 150 150
(1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX
Unit V V V A A A W W/°C V/ns °C °C 1...
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