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LH28F160SGED-L10

Sharp Electrionic Components

16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory

LH28F160SGED-L10 LH28F160SGED-L10 DESCRIPTION The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology ...


Sharp Electrionic Components

LH28F160SGED-L10

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Description
LH28F160SGED-L10 LH28F160SGED-L10 DESCRIPTION The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160SGEDL10 is the highest density, highest performance non-volatile read/write solution for solid-state storage applications. LH28F160SGED-L10 can read/write/erase at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realizes longer battery life and suits for cellular phone application. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160SGED-L10 offers three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. 16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read Enhanced data protection features – Absolute protection with VPP = GND – Flexible block locki...




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