AO6602

AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V ID= 3.5A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 70mΩ (VGS=4.5V) P-Channel -30V -2.7A (VGS=-10V) RDS(ON) < 100mΩ (VGS=-10V) < 170mΩ (VGS=-4.5V) Top View TSOP6 Bottom View Top View D1 D2 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C 3.5 -2.7 ID 3 -2.1 IDM 20 -15 TA=25°C Power Dissipation B TA=70°C 1.15 1.15 PD 0.73 0.73 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A W °C Thermal Charact...