AO6701

AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is www.DataSheet4U.com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS & Sony 259 specifications). AO6701L is a Green Product ordering option. AO6701 and AO6701L are electrically identical. Features VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] D A S G K N/C D K 1 6 2 5 3 4 G S A TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B MOSFET -30 ±12 -2.3 -1.8 -15 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-Stat...