AO6702

AO6702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional www.DataSheet4U.com blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS & Sony 259 specifications). AO6702L is a Green Product ordering option. AO6702 and AO6702L are electrically identical. Features VDS (V) = 20V ID = 3.8A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] D A S G K N/C D K 1 6 2 5 3 4 G S A TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B MOSFET 20 ±8 3.8 3 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.15 0.7 -55 to 150 Typ 80.3 117 43 109.4...