AO6704

AO6704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6704 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A www.DataSheet4U.com Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6704 is Pb-free (meets ROHS & Sony 259 specifications). AO6704L is a Green Product ordering option. AO6704 and AO6704L are electrically identical. TSOP6 Top View K S G A D D Features VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] D K 1 6 2 5 3 4 G S A Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET 30 ±12 3.6 2.9 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.39 0.89 -55 to 150 Typ 70...