AO6802

AO6802 Dual N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 75mΩ (VGS = 10V) RDS(ON) < 115mΩ (VGS = 4.5V) The AO6802 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6802 is Pb-free (meets ROHS & Sony 259 specifications). AO6802L is a Green Product ordering option. AO6802 and AO6802L are electrically identical. TSOP6 Top View G1 S2 G2 D1 S1 D2 D1 D2 1 6 2 5 3 4 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±20 3.1 2.4 12 1.15 0.73 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6802 N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.1A Static Drain-Source On-Resistance VGS=4.5V, ID=2A gFS ...