N-CHANNEL MOSFET
STP40N20
STB40N20 - STW40N20
N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET
Table 1:...
Description
STP40N20
STB40N20 - STW40N20
N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET
Table 1: General Features
TYPE
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Figure 1: Package
ID 40 A 40 A 40 A Pw 160 W 160 W 160 W
3 1 2
1 2 3
VDSS 200 V 200 V 200 V
RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω
STW40N20 STB40N20
■ ■ ■ ■
■ ■
TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED
TO-220
TO-247
3
DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
1
D2PAK Figure 2: Internal Schematic Diagram
APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UPS
Table 2: Order Codes
SALES TYPE STP40N20 STW40N20 STB40N20 MARKING P40N20 W40N20 B40N20 PACKAGE TO-220 TO-247 D2PAK PACKAGING TUBE TUBE TAPE & REEL
Rev. 3 June 2005 1/13
STB40N20 - STP40N20 - STW40N20
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( )
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Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Tempera...
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