STP40N20

STP40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features TYPE www.DataSheet4U.com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20 ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UPS Table 2: Order Codes SALES TYPE STP40N20 STW40N20 STB40N20 MARKING P40N20 W40N20 B40N20 PACKAGE TO-220 TO-247 D2PAK PACKAGING TUBE TUBE TAPE & REEL Rev. 3 June 2005 1/13 STB40N20 - STP40N20 - STW40N20 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) www.DataSheet4U.com Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Tempera...