STB40NF10L

N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STB40NF10L www.DataSheet4U.com s TYPICAL s s s STB40NF10L VDSS 100 V RDS(on) < 0.033 Ω ID 40 A s RDS(on) = 0.028Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 D2PAK DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 15 40 25 160 150 1 430 –65 to 175 175 (1) Starting T j = 25°C, I D = 20A, VDD = 40V Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area April 2001 1/9 STB40NF10L THERMAL DATA Rthj-case Rthj-amb ...