N-CHANNEL MOSFET
N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET
TYPE STB4NC60
www.DataSheet4U.com s TYPICAL
s s s s
STB4NC60
VD...
Description
N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET
TYPE STB4NC60
www.DataSheet4U.com s TYPICAL
s s s s
STB4NC60
VDSS 600V
RDS(on) < 2.2Ω
ID 4.2A
RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS
s
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 Unit V V V A A A W W/°C V/ns °C
()Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
October 2001
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STB4NC60
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resis...
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