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PLVA668A Dataheets PDF



Part Number PLVA668A
Manufacturers NXP
Logo NXP
Description Low-voltage Avalanche Regulator Diodes
Datasheet PLVA668A DatasheetPLVA668A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com book, halfpage M3D088 PLVA600A series Low-voltage avalanche regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series www.DataSheet4U.com • Total power dissipa.

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com book, halfpage M3D088 PLVA600A series Low-voltage avalanche regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series www.DataSheet4U.com • Total power dissipation: max. 250 mW • Small tolerances of VZ • Working voltage range: nom. 5.0 to 6.8 V • Non-repetitive peak reverse power dissipation: max. 30 W. Top view PLVA600A series PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION handbook, halfpage 2 1 2 n.c. 3 3 1 MAM243 APPLICATIONS • Low current, low power, low noise applications • CMOS RAM back-up circuits • Voltage stabilizers • Voltage limiters • Smoke detector relays. DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. Note MARKING Fig.1 Simplified outline (SOT23) and symbol. TYPE NUMBER PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) ∗9A ∗9B ∗9C ∗9D ∗9E ∗9F ∗9G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZRM PZSM Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. 1999 May 25 2 PARAMETER continuous forward current repetitive peak working current total power dissipation storage temperature junction temperature tp = 100 µs; δ = 10% Tamb = 25 °C; note 1 − −65 − non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C CONDITIONS − MIN. MAX. 250 250 30 250 +150 150 UNIT mA mA W mW °C °C Philips Semiconductors Product specification Low-voltage avalanche regulator diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF VZ www.DataSheet4U.com PLVA600A series PARAMETER forward voltage working voltage PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A CONDITIONS IF = 10 mA IZ = 250 µA − MIN. − TYP. MAX. 0.9 5.20 5.50 5.80 6.10 6.40 6.70 7.00 − − − − − − − 700 250 100 − − − − − − − 20000 5000 1000 500 100 50 10 UNIT V V V V V V V V V V V V V V V Ω Ω Ω mV/K mV/K mV/K mV/K mV/K mV/K mV/K nA nA nA nA nA nA nA 4.80 5.10 5.40 5.70 6.00 6.30 6.60 IZ = 10 µA − − − − − − − 1 kHz superimposed; IZAC is 10% of IZDC; IZ = 250 µA − − − IZ = 250 µA − − − − − − − VR = 80% VZ nominal − − − − − − − 5.00 5.30 5.60 5.90 6.20 6.50 6.80 4.30 5.20 5.51 5.85 6.19 6.49 6.80 − − − 0.20 1.60 1.90 2.40 2.65 2.90 3.40 − − − − − − − VZ working voltage PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A RZ dynamic resistance PLVA650A PLVA653A PLVA656A to PLVA668A SZ temperature coefficient PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A IR reverse current PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A 1999 May 25 3 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes PLVA600A series SYMBOL IR PARAMETER reverse current PLVA650A PLVA653A PLVA656A PLVA659A CONDITIONS VR = 50% VZ nominal − − − − − − − VR = 90% VZ nominal − − − − − − − ILO = 10 µA; IHi = 1 mA ILO = 50 µA; IHi = 1 mA ILO = 100 µA; IHi = 1 mA ILO = 100 µA; IHi = 1 mA f = 1 kHz; B = 1 kHz; IZ = 250 µA − − − − − MIN. TYP. 34 22 1.1 0.9 0.9 0.9 0.8 21 3.5 1.3 1.0 0.05 0.04 0.006 − − − − − MAX. − − − − − − − − − − − − − − 0.1 0.1 0.4 0.2 1.0 UNIT nA nA nA nA nA nA nA µA µA µA µA µA µA µA V V V V µV ----------Hz www.DataSheet4U.com PLVA662A PLVA665A PLVA668A IR reverse current PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A ∆VZ line regulation PLVA659A to PLVA668A PLVA656A PLVA650A PLVA653A Vn noise voltage density THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed circuit-board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W 1999 May 25 4 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads PLVA600A series SOT23 www.DataSheet4U.com D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 25 5 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification www.DataSheet4U.com PLVA600A series This data sheet contains target or goal specifications for product development. This.


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