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DISCRETE SEMICONDUCTORS
DATA SHEET
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book, halfpage
M3D088
PLVA600A series Low-voltage avalanche regulator diodes
Product specification Supersedes data of 1996 Apr 26 1999 May 25
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series www.DataSheet4U.com • Total power dissipation: max. 250 mW • Small tolerances of VZ • Working voltage range: nom. 5.0 to 6.8 V • Non-repetitive peak reverse power dissipation: max. 30 W.
Top view
PLVA600A series
PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION
handbook, halfpage 2
1
2 n.c. 3 3
1
MAM243
APPLICATIONS • Low current, low power, low noise applications • CMOS RAM back-up circuits • Voltage stabilizers • Voltage limiters • Smoke detector relays. DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. Note MARKING
Fig.1 Simplified outline (SOT23) and symbol.
TYPE NUMBER PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia.
MARKING CODE(1) ∗9A ∗9B ∗9C ∗9D ∗9E ∗9F ∗9G
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZRM PZSM Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. 1999 May 25 2 PARAMETER continuous forward current repetitive peak working current total power dissipation storage temperature junction temperature tp = 100 µs; δ = 10% Tamb = 25 °C; note 1 − −65 − non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C CONDITIONS − MIN. MAX. 250 250 30 250 +150 150 UNIT mA mA W mW °C °C
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF VZ
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PLVA600A series
PARAMETER forward voltage working voltage PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A
CONDITIONS IF = 10 mA IZ = 250 µA −
MIN. −
TYP.
MAX. 0.9 5.20 5.50 5.80 6.10 6.40 6.70 7.00 − − − − − − − 700 250 100 − − − − − − − 20000 5000 1000 500 100 50 10
UNIT V V V V V V V V V V V V V V V Ω Ω Ω mV/K mV/K mV/K mV/K mV/K mV/K mV/K nA nA nA nA nA nA nA
4.80 5.10 5.40 5.70 6.00 6.30 6.60 IZ = 10 µA − − − − − − − 1 kHz superimposed; IZAC is 10% of IZDC; IZ = 250 µA − − − IZ = 250 µA − − − − − − − VR = 80% VZ nominal − − − − − − −
5.00 5.30 5.60 5.90 6.20 6.50 6.80 4.30 5.20 5.51 5.85 6.19 6.49 6.80 − − − 0.20 1.60 1.90 2.40 2.65 2.90 3.40 − − − − − − −
VZ
working voltage PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A
RZ
dynamic resistance PLVA650A PLVA653A PLVA656A to PLVA668A
SZ
temperature coefficient PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A
IR
reverse current PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A
1999 May 25
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Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
PLVA600A series
SYMBOL IR
PARAMETER reverse current PLVA650A PLVA653A PLVA656A PLVA659A
CONDITIONS VR = 50% VZ nominal − − − − − − − VR = 90% VZ nominal − − − − − − − ILO = 10 µA; IHi = 1 mA ILO = 50 µA; IHi = 1 mA ILO = 100 µA; IHi = 1 mA ILO = 100 µA; IHi = 1 mA f = 1 kHz; B = 1 kHz; IZ = 250 µA − − − − −
MIN.
TYP. 34 22 1.1 0.9 0.9 0.9 0.8 21 3.5 1.3 1.0 0.05 0.04 0.006 − − − − −
MAX. − − − − − − − − − − − − − − 0.1 0.1 0.4 0.2 1.0
UNIT nA nA nA nA nA nA nA µA µA µA µA µA µA µA V V V V µV ----------Hz
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PLVA662A PLVA665A PLVA668A
IR
reverse current PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A
∆VZ
line regulation PLVA659A to PLVA668A PLVA656A PLVA650A PLVA653A
Vn
noise voltage density
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed circuit-board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W
1999 May 25
4
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PLVA600A series
SOT23
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D B E A X
HE
v M A
3
Q A A1
1
e1 e bp
2
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 25
5
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification
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PLVA600A series
This data sheet contains target or goal specifications for product development. This.