LH28F400SU-LC

LH28F400SU-LC FEATURES User-Configurable x8 or x16 Operation 4M (512K × 8, 256K × 16) Flash Memory 56-PIN TSOP TOP VIEW 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC A16 BYTE GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 QE GND CE A0 NC NC 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) Minimum 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V) 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register – RY  / » BY  » Status Output System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase Data Protection - Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset) 4 µA (Typ.) ICC in CMOS Standby 0.2 µA (Typ.) Deep Power-Down Extended Temperature Operation – -40°C to +85°C 28F400SUH-LC15-1 Figure 1. 56-Pin TSOP Configuration State-of-the-Art 0.55 µm ETOX™ Flash Technology 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package 48-Pin 1.2 mm × ...