4M (512K bb 8/ 256K bb 16) Flash Memory
LH28F400SU-NC
FEATURES
56-PIN TSOP
4M (512K × 8, 256K × 16) Flash Memory
TOP VIEW
• User-Configurable x8 or x16 Operat...
Description
LH28F400SU-NC
FEATURES
56-PIN TSOP
4M (512K × 8, 256K × 16) Flash Memory
TOP VIEW
User-Configurable x8 or x16 Operation 5 V Write/Erase Operation (5 V VPP)
– No Requirement for DC/DC Converter to Write/Erase
NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29
NC A16 BYTE GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE GND CE A0 NC NC
60 ns Maximum Access Time
(VCC = 5.0 V ± 0.25 V)
80ns Maximum Access Time
(VCC = 5.0 V ± 0.5 V)
32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase
– Command User Interface – Status Register – RY / » BY » Status Output
System Performance Enhancement
– Erase Suspend for Read – Two-Byte Write – Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect Set/Reset)
5 µA (Typ.) ICC in CMOS Standby 0.2 µA (Typ.) Deep Power-Down State-of-the-Art 0.45 µm ETOX™ Flash
Technology
28F400SUT-NC60-1
Figure 1. 56-Pin TSOP Configuration
56-Pin, 1.2 mm × 14 mm × 20 mm TSOP
(Type I) Package
48-Pin, 1.2 mm × 12 mm × 18 mm TSOP
(Type I) Package
44-Pin, 600-mil SOP Package
1
LH28F400SU-NC
4...
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