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LH28F400SU-NC

Sharp Electrionic Components

4M (512K bb 8/ 256K bb 16) Flash Memory

LH28F400SU-NC FEATURES 56-PIN TSOP 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW • User-Configurable x8 or x16 Operat...


Sharp Electrionic Components

LH28F400SU-NC

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LH28F400SU-NC FEATURES 56-PIN TSOP 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW User-Configurable x8 or x16 Operation 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC A16 BYTE GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE GND CE A0 NC NC 60 ns Maximum Access Time (VCC = 5.0 V ± 0.25 V) 80ns Maximum Access Time (VCC = 5.0 V ± 0.5 V) 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register – RY  / » BY  » Status Output System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset) 5 µA (Typ.) ICC in CMOS Standby 0.2 µA (Typ.) Deep Power-Down State-of-the-Art 0.45 µm ETOX™ Flash Technology 28F400SUT-NC60-1 Figure 1. 56-Pin TSOP Configuration 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package 48-Pin, 1.2 mm × 12 mm × 18 mm TSOP (Type I) Package 44-Pin, 600-mil SOP Package 1 LH28F400SU-NC 4...




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