4M (512K bb 8/ 256K bb 16) Flash Memory
LH28F400SUB-Z0
FEATURES
49-PIN CSP
4M (512K × 8, 256K × 16) Flash Memory
TOP VIEW
• User-Configurable x8 or x16 Operat...
Description
LH28F400SUB-Z0
FEATURES
49-PIN CSP
4M (512K × 8, 256K × 16) Flash Memory
TOP VIEW
User-Configurable x8 or x16 Operation 5 V Write/Erase Operation
(5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase
1 A B C D E A1 A2 A3 A0 OE
2 A4 A5 A6 DQ9 DQ1 DQ8 DQ0
3 A7 A17 RY/BY NC DQ3 DQ10 DQ2
4 VPP RP NC NC DQ11 VCC VCC
5 A9 A8 WE NC DQ4
6 A12 A11 A10 DQ13 DQ6
7 A15 A14 A13 A16 DQ15/ A -1
150 ns Maximum Access Time
(VCC = 3.3 V ± 0.3 V)
Min. 2.7 V Read Capability
– 160 ns Maximum Access Time (VCC = 2.7 V)
F GND G CE
DQ12 DQ14 GND DQ5 DQ7 BYTE
32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase
– Command User Interface – Status Register – RY / » BY » Status Output
28F400SUB-1
Figure 1. CSP Configuration
System Performance Enhancement
– Erase Suspend for Read – Two-Byte Write – Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during Power Transition – Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect Set/Reset)
4 µA (Typ.) ICC in CMOS Standby 0.2 µA (Typ.) Deep Power-Down State-of-the-Art 0.45 µm ETOX™ Flash
Technology
Extended Temperature Operation
– -20°C to +85°C
49-Pin, .67 mm × 8 mm × 8 mm
CSP Package
1
LH28F400SUB-Z0
4M (512K × 8, 256K × 16) Flash Memory
DQ8 - DQ15
DQ0 - DQ7
OUTPUT BUFFER
OUTPUT BUFFER
INPUT BUFFER
INPUT BUFFER
ID REGISTER
DATA QUEUE REGISTERS
I/O LOGIC
BYTE
CS...
Similar Datasheet