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LH28F400SUB-Z0

Sharp Electrionic Components

4M (512K bb 8/ 256K bb 16) Flash Memory

LH28F400SUB-Z0 FEATURES 49-PIN CSP 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW • User-Configurable x8 or x16 Operat...


Sharp Electrionic Components

LH28F400SUB-Z0

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LH28F400SUB-Z0 FEATURES 49-PIN CSP 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW User-Configurable x8 or x16 Operation 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase 1 A B C D E A1 A2 A3 A0 OE 2 A4 A5 A6 DQ9 DQ1 DQ8 DQ0 3 A7 A17 RY/BY NC DQ3 DQ10 DQ2 4 VPP RP NC NC DQ11 VCC VCC 5 A9 A8 WE NC DQ4 6 A12 A11 A10 DQ13 DQ6 7 A15 A14 A13 A16 DQ15/ A -1 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) Min. 2.7 V Read Capability – 160 ns Maximum Access Time (VCC = 2.7 V) F GND G CE DQ12 DQ14 GND DQ5 DQ7 BYTE 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register – RY  / » BY  » Status Output 28F400SUB-1 Figure 1. CSP Configuration System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase Data Protection – Hardware Erase/Write Lockout during Power Transition – Software Erase/Write Lockout Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset) 4 µA (Typ.) ICC in CMOS Standby 0.2 µA (Typ.) Deep Power-Down State-of-the-Art 0.45 µm ETOX™ Flash Technology Extended Temperature Operation – -20°C to +85°C 49-Pin, .67 mm × 8 mm × 8 mm CSP Package 1 LH28F400SUB-Z0 4M (512K × 8, 256K × 16) Flash Memory DQ8 - DQ15 DQ0 - DQ7 OUTPUT BUFFER OUTPUT BUFFER INPUT BUFFER INPUT BUFFER ID REGISTER DATA QUEUE REGISTERS I/O LOGIC BYTE CS...




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