2SD1417 Transistors Datasheet

2SD1417 Datasheet PDF, Equivalent


Part Number

2SD1417

Description

Silicon NPN Power Transistors

Manufacture

JMnic

Total Page 3 Pages
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2SD1417
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1417
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1022
·DARLINGTON
www.DataSheet4U.com
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
60
60
5
7
0.2
30
2.0
150
-55~150
UNIT
V
V
V
A
A
W

2SD1417
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1417
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat-1
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VCEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=3A ;IB=6mA
IC=7A ;IB=14mA
VBEsat Base-emitter saturation voltage
IC=3A ;IB=6mA
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=3V
hFE-2
DC current gain
IC=7A ; VCE=3V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=6mA
VCCA45V ,RL=15B
MIN TYP. MAX UNIT
60 V
0.9 1.5
V
1.2 2.0
V
1.5 2.5
V
100 µA
3.0 mA
2000
15000
1000
0.8 µs
3.0 µs
2.5 µs
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD1417 DESCRIPTION ·With TO-220Fa pac kage ·High DC current gain ·Low satur ation voltage ·Complement to type 2SB1 022 ·DARLINGTON www.DataSheet4U.com A PPLICATIONS ·Power amplifier and switc hing applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simpli fied outline (TO-220Fa) and symbol DESC RIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETE R Collector-base voltage Collector -emi tter voltage Emitter-base voltage Colle ctor current Base current TC=25 PC Coll ector power dissipation Ta=25 Tj Tstg J unction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitte r Open base Open collector VALUE 60 60 5 7 0.2 30 W UNIT V V V A A SavantIC S emiconductor Product Specification Si licon NPN Power Transistors CHARACTERIS TICS Tj=25 unless otherwise specified P ARAMETER Collector-emitter breakdown voltage Collector-emitter saturat.
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