PH1819-33

an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz Features l l l l l PHl819-33 v2.01 I.744 (18.90)-1 NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System 225 (5.72)*.015 (0.38) , I ;48/6.30) &&y&T www.DataSheet4U.com 1 *\I 1 f CqO(6.35) Absolute’ Maximum Ratings at 25°C I Parameter Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTemperature Thermal Resistance I Sym~l VCEO VcE.s Vem I ‘c PO T c-Fe ) T, 6JC I Rating 25 65 3.0 1 Units V V 1 225(5.72)+.015 (0.38) ,181 (4.6O)zt.OlO (0.25) (5.59) 2.20 I-.co5 (0.13)+.001 (0.03) 1 I / 11 D6Ojl.52) f V I 4.7 91 -55 to +150 I * w “C I t+ .087 (2.21)r.OlO (0.25) 1 200 3.0 I “C “C/W I UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES t.005’ (MILLIMETERS t0.13MM) Electrical Characteristics Parameter Power Gain Collector Efficiency Input Return Loss r at 25°C Symbol GP % Min 7.0 40 Max - Units dB % Test Conditions I’,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz V,,=25 V, l,Q=200 mA, P,,,=33 W, F=l805,1880 V,,=25 V, I,,=200 mA, P,,,=33 W, F=l805,1880 MHz MHz RL VSWR-T 10 - 2:l dB - Load Mismatch Tolerance V,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz Broadband Test Fixture impedances I- 1805 ~~ 1850 I 1.8 - j5.5 I 4.0-j1.4 I 1.6 - j5.1 l.?-j4.8 3.9 - jl.4 4.0 - j0.9 18...