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STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
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Type
VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V
RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω
ID
3
STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N
12 A 12 A 12 A(1) 12 A 12 A
1
2
3 12
TO-220
3 1
I²PAK
D²PAK
3
1. Limited only by maximum temperature allowed ■ ■ ■
2
3
1
2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-247
1
TO-220FP
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary
Marking 14NM65N 14NM65N 14NM65N 14NM65N 14NM65N Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging Tube Tape and reel Tube Tube Tube
Order codes STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N
October 2008
Rev 2
1/18
www.st.com 18
Contents
STB/F/I/P/W14NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
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3
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 5 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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STB/F/I/P/W14NM65N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220, TO-247 D²PAK, I²PAK Unit TO-220FP V V 12(1) 7.6 (1) 48(1) 30 15 --55 to 150 150 2500 A A A W V/ns V °C °C
VDS
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Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature 12 7.6 48 125
650 ± 25
VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg TJ
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value Parameter TO-220 I²PAK D²PAK 1 62.5 ---30 50 -TO-247 TO-220.