STD10NM65N

STD10NM65N Datasheet N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS @ Tjmax. RDS(on) max. ID STD10NM65N 710 V 0.48 Ω 9A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt Drain-source voltage slope (VDD = 520 V, ID = 9 A, VGS = 10 V) Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited ...