STU2040PL

S T U/D2040P L S amHop Microelectronics C orp. Nov.18,2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com -40V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (T A =25 C unles s otherwis e noted) S ymbol V DS V GS Limit -40 20 -20 -16.7 -84 -20 50 35 -55 to 175 W C Unit V V A A A A 25 C 70 C ID IDM IS PD T J , T S TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D2040P L P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -32V, V GS= 0V V GS = 20V, V DS = 0V V DS = V GS , ID =-250uA V GS =-10V, ID= -16A V GS =-4.5V, ID = -10A V DS =-5V, V GS = -10V V DS = -10V, ID = -15A Min Typ C Max Unit -40 1 V uA 100 nA -0.8 -1.5 35 46 50 15 1115 1250 200 125 3 11.5 7.3 53.1 31.8 19.5 9.4 4.1 2.8 13 8.5 62 ...