STU20N03L

S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( mW) ID 28A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 23 @ V G S = 10V 39 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 28 70 20 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W STU/D20N03L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.DataSheet4U.com Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =20A VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 1 100 1 1.5 17 30 50 8 614 83 61 2.5 V uA nA V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Volta...