STU2455PLS

S T U/D2455P LS S amHop Microelectronics C orp. Dec 30, 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com F E AT UR E S ( m W ) Max ID -24 R DS (ON) S uper high dense cell design for low R DS (ON ). 42 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D -55V D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange S ymbol Vspike c V DS V GS ID IDM IS PD T J , T S TG Limit -60 -55 20 -24 -72 -20 50 -55 to 175 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D2455P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -10A V GS =-4.5V, ID = - 6A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A Min Typ C Max Unit -55 -1 V uA 100 nA -1 -1.7 33 42 -24 16 1730 185 125 1.7 21 25 127 35 31 1...