STU2555NL

S amHop Microelectronics C orp. S T U/D2555NL Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 55V F E AT UR E S ( m W ) Max ID 19A R DS (ON) S uper high dense cell design for low R DS (ON ). 43@ V G S = 10V 58@ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ Ta -P ulsed b (T A =25 C unles s otherwis e noted) S ymbol Vspike d V DS V GS Limit 60 55 20 19 15 35 15 42 28 -55 to 150 W C Unit V V V A A A A 25 C 70 C ID IDM IS PD T J , T S TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D2555NL N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 5V, ID = 8A Min Typ C Max Unit 55 1 V uA 100 nA 1.4 1.8 28 OFF CHAR ACTE R IS TICS Drain-S ource B...