STD25N03L

S T U/D25N03L S amHop Microelectronics C orp. J uly 11 , 2005 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( m W ) Max ID 25A R DS (ON) S uper high dense cell design for low R DS (ON ). 21 @ V G S = 10V 32 @ V G S = 4.5V R ugged and reliable. TO251 and TO 252 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 25 75 20 50 -55 to 175 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient a 1 R JC R JA 3 50 C /W C /W S T U/D25N03L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 17 25 20 16 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com Ga...