STP3N62K3

STB3N62K3, STP3N62K3 Datasheet N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in D2PAK and TO-220 packages Features TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected 2.7 A D2PAK TO-220 Applications Switching applications Description These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. DS12625 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB3N62K3, STP3N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 620 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM (1) Drain current (pulsed) uc PTOT Total dissipation at TC = 25 °C rod ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) P dv/dt (2)...