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STD6025NLS Dataheets PDF



Part Number STD6025NLS
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STD6025NLS DatasheetSTD6025NLS Datasheet (PDF)

S T U/D6025NLS S amHop Microelectronics C orp. Aug 20 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com F E AT UR E S ( mW) ID 60A R DS (ON) 6 T yp S uper high dense cell design for low R DS (ON ). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D 25V 7.5 D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless ot.

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S T U/D6025NLS S amHop Microelectronics C orp. Aug 20 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com F E AT UR E S ( mW) ID 60A R DS (ON) 6 T yp S uper high dense cell design for low R DS (ON ). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D 25V 7.5 D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ T C =25 C S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 25 20 60 210 20 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D6025NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 25 1 V uA 100 nA 1 1.7 6 7.5 60 21 1680 480 300 2.8 20 42 58 38 32.5 17 3.2 10 3 8 10 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20A V GS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U/D6025NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Diode Forward Voltage www.DataSheet4U.com S ymbol VSD Condition V GS = 0V, Is = 10A Min Typ Max Unit 0.82 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 75 V G S =4.5V V G S =4V 60 20 -55 C 15 T j=125 C 10 25 C ID , Drain C urrent(A) 45 V G S =8V V G S =10V 30 V G S =3V 15 0 I D , Drain C urrent (A) V G S =5V 5 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 12 1.6 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 10 1.4 1.2 1.0 0.8 0.6 0.4 -55 V G S =10V I D =20A R DS (on) (m W) 8 6 4 2 0 V G S =4.5V V G S =10V V G S =4.5V I D =10A 0 15 30 45 60 75 -25 0 25 50 75 100 125 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D6025NLS B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA www.DataSheet4U.com 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 42 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =20A Is , S ource-drain current (A) 35 10.0 25 C R DS (on) (m W) 28 21 14 7 25 C 0 0 2 4 6 8 10 75 C 125 C 125 C 75 C 1.0 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate- S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D6025NLS 3000 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 V DS =15V I D =20A 2500 C , C apacitance (pF ) 2000 1500 1000 C os s C rs s 0 0 5 10 15 C is s 500 www.DataSheet4U.com 6 20 25 30 0 5 10 15 20 25 30 35 40 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 220 Tr 600 T D(off) Tf T D(on) S witching T ime (ns ) I D , Drain C urrent (A) 100 60 10 it 100 N) (O S L im 10 DC 10 1m ms s 0m 10 RD s 1s 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate.


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