ADN2849 Driver Datasheet

ADN2849 Datasheet PDF, Equivalent


Part Number

ADN2849

Description

10.7 Gbps Electro-Absorption Modulator Driver

Manufacture

Analog Devices

Total Page 17 Pages
PDF Download
Download ADN2849 Datasheet PDF


ADN2849
10.7 Gbps Electro-Absorption Modulator Driver
Preliminary Technical Data
ADN2849
FEATURES
Data Rates up to 10.709Gb/s
Typical Rise/Fall Time 27ps
Power Dissipation 900mW (at 2V swing, 1V offset)
Programmable Modulation Voltage up to 3V
Programmable Bias Offset Voltage up to 2V
Voltage-input control for offset, modulation
www.DataSheeCt4rUos.csoPmoint Adjust Range 30%- 85%
Selectable Data Retiming
PECL/CML Data & Clock Inputs
50on Chip Data & Clock Terminations
Modulation Ebnable/Disable
|S11|<-10dB , |S22|<-8dB at 10GHz
Positive or negative 5.2 or 5.0V single supply operation
Available in dice and 4x4mm 24 Lead LFCSP package
PRODUCT DESCRIPTION
The ADN2849 is a low power 10.7Gbps driver for electro-
absorption modulator (EAM) applications. The modulation
voltage is programmable via an external voltage up to a
maximum swing of 3V when driving 50. The bias offset
voltage and output eye cross point are also programmable. On-
chip 50resistor is provided for back termination of the
output. The ADN2849 is driven by AC coupled differential
CML level data and has selectable data retiming to remove jitter
from data input signal. The modulation voltage can be enabled
or disabled by driving the MOD_ENB pin with the proper logic
levels. It can operate with positive or negative (5.2V or 5.0V)
supply voltage.
The ADN284949 is available in a compact 4x4mm plastic
package or dice format.
APPLICATIONS
SONET OC-192 Optical Transmitters
SDH STM-64 Optical Transmitters
10Gb Ethernet IEEE802.3
XFP/X2/XENPACK/MSA-300 Optical Modules
ADN2849
CPAP CPAN MOD_SET
BIAS_SET GND VTERM MODN_TERM
GND
R
R
DATAP
DATAN
VBB
CLKP
CLKN
50
50
50
50
DQ
MUX
CROSS
POINT
ADJUST
50
MODP
VEE
VEE CLK_SELB MOD_ENB
Figure 1. Functional Block Diagram
Rev. Pr. G August 2004
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.

ADN2849
ADN2849
Preliminary Technical Data
Specifications
(Electrical Specifications (VEE=VEEMIN to VEEMAX . All specifications Tmin to Tmax, ZL=50unless otherwise noted. Typical values
specified at 250C)
Table 1.
Parameter
Min
Typ Max
Unit Conditions
Bias Offset Voltage(MODP)
Bias offset voltage
-0.25
-2.0 V Note 1
BIAS_SET voltage to bias offset voltage gain
0.9 1.1 V/V Ta=250C, VEE=-5.2V
Bias offset voltage drift over temperature and VEE
www.DataMShoedeut4laUt.icoonmVoltage(MODP)
-5
5%
Modulation voltage swing
0.6 3.0 V Note1
MOD_SET voltage to modulation voltage swing gain
1.5
1.9 V/v Ta=250C, VEE=-5.2V
Modulation voltage drift over temperature and VEE
-5
5%
Back termination resistance
40 60
Rise time (20% - 80%)
27 36
ps
Fall time (20% - 80%)
27 36
ps
Random jitter
0.75 ps RMS
Total jitter
10 psp-p
Cross point adjust range
30 85 %
Cross point drift over temperature and VEE
-5
5%
Minimum output voltage(single ended)
VEE+1.7
V Note1
|S22| -8 dB At 10GHz
Modulation enable time
100 ns
Modulation disable time
100 ns
Data Inputs (DATAP, DATAN)
Differential Input voltage
600
1600
mVp-p
Termination resistance
40 60
Setup time (see figure 2)
25 ps CLK_SELB=’0’
Hold time (see figure 2)
25 ps CLK_SELB=’0’
|S11| -10 DB At 10GHz
Clock Inputs (CLKP, CLKN)
Differential Input voltage
600
1600
mVp-p
Termination resistance
40 60
|S11| -10 dB At 10GHz
Cross point adjust (CPAN, CPAP)
Input voltage range
-0.85
-1.85
V
CPAP, CPAN differential voltage
0.6 Vp-p
Input current
85 115 µA
Logic Inputs (MOD_ENB, CLK_SELB)
VIH
VEE+2
V
VIL
VEE+0.8
V
IIL -400 µA VI=VEE+0.4V
IIH 20 µA VI=VEE+2.4V
200 µA VI=0V
Supply
VEE
-4.75
-5.2 -5.5
V
IMOD=0
IEE 52 mA VMODP/MODN=0
Notes:
Minimum supply voltage and minimum output voltage determine maximum output swing and maximum bias offset that can be achieved concurrently.
Measured using the characterization circuit shown in figure 3.
Rev. Pr. G | Page 2 of 17


Features 10.7 Gbps Electro-Absorption Modulator D river Preliminary Technical Data FEATUR ES Data Rates up to 10.709Gb/s Typical Rise/Fall Time 27ps Power Dissipation 9 00mW (at 2V swing, 1V offset) Programma ble Modulation Voltage up to 3V Program mable Bias Offset Voltage up to 2V Volt age-input control for offset, modulatio n Cross Point Adjust Range 30%- 85% www .DataSheet4U.com Selectable Data Retimi ng PECL/CML Data & Clock Inputs 50Ω o n Chip Data & Clock Terminations Modula tion Ebnable/Disable |S11|<-10dB , |S22 |<-8dB at 10GHz Positive or negative 5. 2 or 5.0V single supply operation Avail able in dice and 4x4mm 24 Lead LFCSP pa ckage ADN2849 PRODUCT DESCRIPTION The ADN2849 is a low power 10.7Gbps driver for electroabsorption modulator (EAM) a pplications. The modulation voltage is programmable via an external voltage up to a maximum swing of 3V when driving 50Ω. The bias offset voltage and outp ut eye cross point are also programmabl e. Onchip 50Ω resistor is provided for back termination of the outp.
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