RF Amplifier. BB504C Datasheet

BB504C Amplifier. Datasheet pdf. Equivalent


Part BB504C
Description Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Feature BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec. .
Manufacture Hitachi Semiconductor
Datasheet
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BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplif BB504C Datasheet
BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplif BB504C Datasheet
Recommendation Recommendation Datasheet BB504C Datasheet




BB504C
BB504C
Build in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
ADE-208-983D (Z)
5th. Edition
Dec. 2000
Features
www.DataSheBeut4ilUd.cinomBiasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
Notes:
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “DS–”.
2. BB504C is individual type number of HITACHI BBFET.



BB504C
BB504C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
Channel temperature
Storage temperature
www.DataSheet4U.com
ID
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
6
Gate1 to source breakdown
voltage
V(BR)G1SS +6
Gate2 to source breakdown
voltage
V(BR)G2SS +6
Gate1 to source cutoff current IG1SS
Gate2 to source cutoff current IG2SS
Gate1 to source cutoff voltage VG1S(off)
Gate2 to source cutoff voltage VG2S(off)
Drain current
I D(op)
0.6
0.6
13
Forward transfer admittance |yfs|
24
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
c iss
c oss
c rss
PG
1.7
1.0
25
Noise figure (1)
Power gain (2)
NF —
PG 17
Noise figure (2)
NF —
Typ Max Unit Test Conditions
——V
ID = 200µA, VG1S = VG2S = 0
——V
IG1 = +10µA, VG2S = VDS = 0
——V
IG2 = +10µA, VG1S = VDS = 0
— +100 nA
— +100 nA
0.85 1.1 V
0.85 1.1 V
16 19 mA
29 34 mS
2.1
1.4
0.027
30
2.5
1.8
0.05
pF
pF
pF
dB
1.0 1.8 dB
22 — dB
1.75 2.3 dB
VG1S = +5V, VG2S = VDS = 0
VG2S = +5V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 120k
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 120k, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120k
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120k
f = 200MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120k
f = 900MHz
2







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