DatasheetsPDF.com

BB504C Dataheets PDF



Part Number BB504C
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Datasheet BB504C DatasheetBB504C Datasheet (PDF)

BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec. 2000 Features www.DataSheet4U.com • Build in Biasing • • • • Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; .

  BB504C   BB504C



Document
BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec. 2000 Features www.DataSheet4U.com • Build in Biasing • • • • Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “DS–”. BB504C is individual type number of HITACHI BBFET. BB504C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.6 0.6 13 24 1.7 1.0 — 25 — 17 — Typ — — — — — 0.85 0.85 16 29 2.1 1.4 0.027 30 1.0 22 1.75 Max — — — +100 +100 1.1 1.1 19 34 2.5 1.8 0.05 — 1.8 — 2.3 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = +10 µA, VG1S = VDS = 0 VG1S = +5V, V G2S = VDS = 0 VG2S = +5V, V G1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100µA VDS = 5V, VG1S = 5V, ID = 100µA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 120kΩ VDS = 5V, VG1 = 5V, VG2S =4V RG = 120kΩ, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120kΩ f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120kΩ f = 200MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120kΩ f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain (1) Noise figure (1) Power gain (2) Noise figure (2) I D(op) |yfs| c iss c oss c rss PG NF PG NF 2 BB504C Test Circuits • DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 www.DataSheet4U.com A ID Drain Source • 200MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50Ω) 1000p 36p L1 1000p 47k BBFET L2 1000p 47k Output(50Ω) 10p max 1000p 1SV70 RG 120k RFC 1SV70 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB504C • 900 MHz Power Gain, Noise Figure Test Circuit VG1 VG2 C4 C5 VD C6 R1 R2 C3 G2 R3 D L3 RFC Output L4 Input www.DataSheet4U.com L1 L2 G1 S C1 C2 C1, C2 C3 C4 to C6 R1 R2 R3 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 120 kΩ 47 kΩ 4.7 kΩ L1: 10 10 L2: 26 3 3 (Φ1mm Copper wire) Unit:mm 8 21 L4: 29 10 7 7 10 L3: 18 RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm 4 BB504C Maximum Channel Power Dissipation Curve Typical Output Characteristics 20 82 10 k Ω 15 0k 1 2 0 kΩ 0 kΩ Ω Pch (mW) 200 I D (mA) 16 Channel Power Dissipation 12 100 Drain Current RG 150 =6 V G2S = 4 V V G1 = VDS 8k Ω 8 50 kΩ 0 18 Ω 0k 22 4 www.DataSheet4U.com 0 50 100 150 Ta (°C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 5 V DS (V) Forward Transfer Admittance |y fs | (mS) Drain Current vs. Gate1 Voltage 20 V DS = 5 V R G = 120 kΩ 4V Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 120 kΩ f = 1 kHz 4V 3V I D (mA) 16 24 12 3V 2V 18 2V Drain Current 8 12 4 VG2S = 1 V 6 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 5 BB504C Power Gain vs. Gate Resistance 40 Noise Figure vs. Gate Resistance 4 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200MHz Power Gain PG (dB) Noise Figure NF (dB) 35 30 25 20 15 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 3 2 1 10 10 20 50 100 200 500 1000 www.DataSheet4U.com Gate Resistance R G (k Ω ) 0 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Power Gain vs. Gate Resistance 40 35 4 Noise Figure vs. Gate Resistance V DS = 5V V G1 = 5 V V G2S = 4 V f = 900 MHz Power Gain PG (dB) Noise Figure NF (dB) 3 30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 6 BB504C Input Capacitance vs. Gate2 to Source Voltage 4 Input Capacitance Ciss (pF) 30 Drain Current I D (mA) Drain Current vs. Gate Resistance 3 20 2 10 V DS = VG1 = 5 V V G2S = 4 V 0 10 1 www.DataSheet4U.com V DS = VG1 = 5 V R G = 120 .


ADN2873 BB504C BB504C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)