DatasheetsPDF.com

BB506C Dataheets PDF



Part Number BB506C
Manufacturers Renesas Technology
Logo Renesas Technology
Description Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet BB506C DatasheetBB506C Datasheet (PDF)

BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

  BB506C   BB506C


Document
BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506C is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 –0 +6 –0 30 250 150 –55 to +150 Unit V V V mA mW °C °C Drain current ID Channel power dissipation PchNote3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm). Rev.1.00 Jun. 27, 2005, page 1 of 8 BB506C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current www.DataSheet4U.com Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss PG NF Min 6 +6 +6 — — 0.5 0.4 12 27 1.2 0.7 19 — Typ — — — — — 0.8 0.7 16 32 1.6 1.1 24 1.4 Max — — — +100 +100 1.1 1.0 20 38 2.0 1.5 29 2.1 Unit V V V nA nA V V mA mS pF pF dB dB Test Conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = +10 µA, VG2S = VDS = 0 IG2 = +10 µA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 µA VDS = 5 V, VG1S = 5 V, ID = 100 µA VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 kΩ VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 kΩ, f = 1 MHz VDS = 5 V, VG1 = 5V, VG2S = 4 V RG = 100 kΩ, f = 900 MHz Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Rev.1.00 Jun. 27, 2005, page 2 of 8 BB506C 900 MHz Power Gain, Noise Figure Test Circuit VG1 VG2 C4 C5 VD C6 R1 R2 C3 G2 R3 D L3 RFC Output (50 Ω) L4 Input (50 Ω) G1 S L1 L2 www.DataSheet4U.com C1 C2 C1, C2 C3 C4 to C6 R1 R2 R3 : : : : : : Variable Capacitor (10 pF MAX) Disk Capacitor (1000 pF) Air Capacitor (1000 pF) 100 kΩ 47 kΩ 4.7 kΩ L1: 10 L2: 10 26 (φ1 mm Copper wire) Unit : mm 8 21 L4: 29 3 L3: 18 10 7 7 RFC : f1 mm Copper wire with enamel 4 turns inside dia 6 mm Rev.1.00 Jun. 27, 2005, page 3 of 8 10 3 BB506C Main Characteristics Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch* (mW) 400 25 Typical Output Characteristics VG2S = 4 V VDS = VG1 20 82 kΩ 68 kΩ 300 ID (mA) 15 100 kΩ 120 kΩ 200 Drain Current 10 kΩ 150 kΩ 100 5 RG www.DataSheet4U.com 0 50 100 150 200 0 0 =1 80 1 2 3 4 5 Ambient Temperature Ta (°C) * Value on the glass epoxy board (50 mm × 40 mm × 1 mm) Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Gate1 Voltage |yfs| (mS) 50 VDS = 5 V VG2S =4 V RG = 100 kΩ f = 1 kHz Drain Current vs. Gate1 Voltage 25 VDS = 5 V VG2S = 4 V RG = 100 kΩ ID (mA) 20 40 Forward Transfer Admittance 4V 15 4V 3V 3V 2V 30 20 Drain Current 10 5 VG2S = 1 V 0 0 1 2 3 4 5 10 V G2S = 0 2V 1V 0 0 1 2 3 4 5 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Drain Current vs. Gate Resistance 25 5 Input Capacitance vs. Gate2 to Source Voltage VDS = 5 V VG1 = 5 V RG = 100 kΩ f = 1 MHz Input Capacitance Ciss (pF) 100 1000 Drain Current ID (mA) 20 4 15 3 10 5 VDS = VG1 = 5 V VG2S = 4 V 0 10 2 1 0 0 1 2 3 4 Gate Resistance RG (kΩ) Gate2 to Source Voltage VG2S (V) Rev.1.00 Jun. 27, 2005, page 4 of 8 BB506C Power Gain vs. Gate Resistance 50 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz Noise Figure vs. Gate Resistance 5 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz Power Gain PG (dB) NF (dB) Noise Figure 40 4 30 3 20 2 10 1 www.DataSheet4U.com 0 10 0 100 1000 10 100 1000 Gate Resistance RG (kΩ) Power Gain vs. Gate2 to Source Voltage 25 5 Gate Resistance RG (kΩ) Noise Figure vs. Gate2 to Source Voltage VDS = 5 V VG1 = 5 V RG = 100 kΩ f = 900 MHz NF (dB) Noise Figure 4 VDS = 5 V VG1 =5 V RG = 100 kΩ f = 900 MHz 1 2 3 Power Gain PG (dB) 20 4 15 3 2 10 5 1 0 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) Gain Reduction vs. Gate2 to Source Voltage 40 VDS = 5 V VG1 = 5 V RG = 100 kΩ f = 900 MHz Gate2 to Source Voltage VG2S (V) Gain Reduction GR (dB) 35 30 25 20 15 10 5 0 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) Rev.1.00 Jun. 27, 2005, page 5 of 8 BB506C S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 –10 –.2 –5 –4 –3 –.4 –2 –.6 –.8 –1 –1.5 –120° –90° –60° 18.


BB504C BB506C BB506M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)