Document
BCR8PM-16LG
Triac
Medium Power Use
Features
IT (RMS) : 8 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A (Package name: TO-220F )
Preliminary Datasheet
R07DS0145EJ0200 (Previous: REJ03G1560-0100)
Rev.2.00 Sep 17, 2010
The Product guaranteed maximum junction temperature 150C
Insulated Type Planar Type UL Recognized: Yellow Card No. E223904
12 3
2
3 1
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1
Symbol
VDRM VDSM
Voltage class
Unit
16
800
V
960
V
R07DS0145EJ0200 Rev.2.00 Sep 17, 2010
Page 1 of 7
BCR8PM-16LG
Parameter RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage
Notes: 1. Gate open.
Symbol IT (RMS)
ITSM
I2t
PGM PG (AV) VGM
IGM Tj Tstg — Viso
Ratings 8
80
26
5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000
Preliminary
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 107°C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
V
Ta = 25°C, AC 1 minute,
T1 T2 G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
2.0
mA Tj = 150°C, VDRM applied
On-state voltage
VTM
—
—
1.6
V
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 ,
VRGT
—
—
1.5
V
RG = 330
VRGT
—
—
1.5
V
Gate trigger currentNote2
IFGT
—
—
30
mA Tj = 25°C, VD = 6 V, RL = 6 ,
IRGT
—
—
30
mA RG = 330
IRGT
—
—
30
mA
Gate non-trigger voltage
Thermal resistance Critical-rate of rise of off-state commutating voltageNote4
VGD
0.2/0.1
—
Rth (j-c)
—
—
(dv/dt)c 10/1
—
—
V Tj = 125°C/150C,
VD = 1/2 VDRM
4.3
°C/W Junction to caseNote3
—
V/s Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature Tj = 125°C/150°C
2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms
3. Peak off-state voltage VD = 400 V
Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time
Main Current
Main Voltage (dv/dt)c
(di/dt)c Time
Time VD
R07DS0145EJ0200 Rev.2.00 Sep 17, 2010
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BCR8PM-16LG
Performance Curves
On-St.