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BTA12-600B

SemiWell Semiconductor

Bi-Directional Triode Thyristor

Preliminary SemiWell Semiconductor BTA12-600B UL : E228720 Symbol ○ Bi-Directional Triode Thyristor Features ◆ R.M.S w...


SemiWell Semiconductor

BTA12-600B

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Description
Preliminary SemiWell Semiconductor BTA12-600B UL : E228720 Symbol ○ Bi-Directional Triode Thyristor Features ◆ R.M.S www.DataSheet4U.com 2.T2 Repetitive Peak Off-State Voltage : 600V On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 79 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 12 119/130 71 5.0 0.5 2.0 10 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V V °C °C g Mar, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 BTA12-600B Electrical Characteristics Symbol www.DataSheet4U.com IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) Items Repetitive Peak ...




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