H7P0601DL

H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 www.DataSheet4U.com Features Low on-resistance RDS(on) = 40 mΩ typ. Low drive current 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating –60 ±20 –20 –80 –20 –12 12.3 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EAR Pch Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.05.2003, page 2 of 10 H7P0601DL, H7P0601DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS –60 Typ — — — — — 40 60 12 2200 220 130 37 6.5 8 25 85 70 15 0.95 30 Max — — ±10 –10 –2.5 50 85 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = –20 A, VGS = 0 IF = –20 A, VGS = 0 diF/dt = 100 A/µs VGS = –10 V, ID = –10 A RL = 3.0 Ω Rg = 4.7 Ω VDD = –25 V VGS = –10 V ID = –20 A Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 V...