Silicon P Channel MOS FET High Speed Power Switching
Description
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET High Speed Power Switching
REJ03G0044-0100Z Rev.1.00 Aug.05.2003
www.DataSheet4U.com
Features
Low on-resistance RDS(on) = 40 mΩ typ. Low drive current 4.5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D 4
DPAK-S
4
G 1 2 S 1 2 3 3
H7P0601DS
H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain...
