Silicon P Channel MOS FET High Speed Power Switching
Description
H7P1002DL, H7P1002DS
Silicon P Channel MOS FET High Speed Power Switching
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Features
Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com Low drive current 4.5 V gate drive device can driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0...
