H7N1002LM

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 Features www.DataSheet4U.com R Low on-resistance DS (on) = 8 mΩ typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N1002LD H7N1002LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1002LM Rev.7.00 Apr 07, 2006 page 1 of 8 H7N1002LD, H7N1002LS, H7N1002LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C IAP Note 3 EAR Pch Tch Note 2 Note 3 Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output ...