H7N1004FM

H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 www.DataSheet4U.com Features Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.27.2003, page 2 of 9 H7N1004FM Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 100 Typ — — — — — 25 30 35 2800 240 140 50 9 11 23 110 70 9.5 0.89 45 Max — — ±10 10 2.5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/dt = 100 A/µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 1 ID = 12.5 A, VGS = 10 V Note 1 ID = 12.5 A, VGS = 4.5 V Note 1 ID = 12.5 A, VGS = 10 V ...