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AP40P03GH Dataheets PDF



Part Number AP40P03GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP40P03GH DatasheetAP40P03GH Datasheet (PDF)

AP40P03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 28mΩ -30A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available fo.

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AP40P03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 28mΩ -30A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 ±20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201109063-1/4 AP40P03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 20 14 3 9 12 56 30 57 915 280 195 Max. Units 28 50 -3 -1 -25 ±100 22 1465 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.DataSheet4U.com Static Drain-Source On-Resistance VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ±20V ID=-18A VDS=-24V VGS=-4.5V VDS=-15V ID=-18A RG=3.3Ω,VGS=-10V RD=0.8Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 30 21 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40P03GH/J 120 100 -10V 100 -10V TA=150oC 80 T A = 25 o C -7.0V -ID , Drain Current (A) -7.0V -ID , Drain Current (A) 80 60 60 -5.0V -4.5V -5.0V 40 40 -4.5V 20 www.DataSheet4U.com 20 V G = -3.0 V 0 0 2 4 6 8 0 2 4 6 V G = -3.0 V 0 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Chara.


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