H5N2001LM

H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H5N2001LD H5N2001LS D RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G 1 2 3 S H5N2001LM Rev.6.00 Jul 14, 2006 page 1 of 7 H5N2001LD, H5N2001LS, H5N2001LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance www.DataSheet4U.com Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Ratings 200 ±30 20 80 20 80 20 75 1.67 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capaci...