H5N2306PF

H5N2306PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0031-0200Z Rev.2.00 Jun.25.2004 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160 15 60 2.08 150 –55 to +150 Rating V V A A A A A W °C/W °C °C Unit Avalanche current IAP Note3 Channel dissipation Pch Note2 www.DataSheet4U.com Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.2.00, Jun.25.2004, page 2 of 9 H5N2306PF Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance www.DataSheet4U.com Reverse transfer capacitance Turn-on deray time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse r...