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H5N2502CF Dataheets PDF



Part Number H5N2502CF
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet H5N2502CF DatasheetH5N2502CF Datasheet (PDF)

H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High Speed Switching Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation.

  H5N2502CF   H5N2502CF


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H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High Speed Switching Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAP Note 3 Pch Note 2 θch-c Tch Tstg Ratings 250 ±30 18 72 18 72 18 35 3.57 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Nov.26.2004, page 1 of 3 H5N2502CF Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance www.DataSheet4U.com Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward voltage Body–drain diode reverse recovery time Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.0 — 10 — — — — — — — — — — — — — Typ — — — — 0.082 17 2300 290 80 40 65 140 40 75 12 38 0.85 200 1.4 Max — ±0.1 1 4.0 0.105 — — — — — — — — — — — 1.3 — — Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 250 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 9 A, VGS = 10 V Note 4 ID = 9 A, VDS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1MHz ID = 9 A RL = 13.9 Ω VGS = 10 V Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/ dt = 100 A/µs Rev.1.00, Nov.26.2004, page 2 of 3 H5N2502CF Package Dimensions As of January, 2003 Unit: mm 10.0 ± 0.3 φ 3.2 ± 0.2 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 4.1 ± 0.3 www.DataSheet4U.com 0.6 ± 0.1 2.5 ± 0.2 2.54 2.54 0.7 ± 0.1 Package Code JEDEC JEITA Mass (reference value) 13.60 ± 1.0 1.0 ± 0.2 1.15 ± 0.2 12.0 ± 0.3 TO-220CFM — — 1.9 g Ordering Information Part Name H5N2502CF Quantity 50 Stick Shipping Container Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.1.00, Nov.26.2004, page 3 of 3 www.DataSheet4U.com Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor h.


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