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H5N2503P

Silicon N Channel MOS FET High Speed Power Switching

Description

H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com Low Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) Low gate charge: Qg ...

Renesas Technology

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