Silicon N Channel MOS FET High Speed Power Switching
H5N2504DL, H5N2504DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1106-0200 (Previous: ADE-208-1375A) Rev....
Description
H5N2504DL, H5N2504DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.2.00 Sep 07, 2005
Features
www.DataSheet4U.com Low
Low on-resistance leakage current High speed switching Low gate charge Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 4 D
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
1 2
G 3 S
1. Gate 2. Drain 3. Source 4. Drain
1 2 3
Rev.2.00 Sep 07, 2005 page 1 of 7
H5N2504DL, H5N2504DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance
www.DataSheet4U.com Channel temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 ±20 7 28 7 28 7 30 4.17 150 –55 to +150
Unit V V A A A A A W °C/W °C °C
IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg
Note 1
Note 2
Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total g...
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