H5N2505DS

H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features Low on-resistance Low drive current www.DataSheet4U.com High speed switching Low gate change Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) G 1 2 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 250 ±30 5 20 5 20 5 25 5 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.3.00 Oct 16, 2006 page 1 of 7 H5N2505DL, H5N2505DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge www.DataSheet4U.com Gate to source charge Gate to drain charge Turn-on delay time Rise time Tur...