Silicon N Channel MOS FET High Speed Power Switching
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2...
Description
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005
Features
www.DataSheet4U.com Low
Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
H5N2508DL, H5N2508DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance
www.DataSheet4U.com Channel temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 ±30 7 28 7 28 7 30 4.17 150 –55 to +150
Unit V V A A A A A W °C/W °C °C
IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg
Note 1
Note 2
Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state ...
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